ONSEMI FDT86256 | 搜芯易Sourcengine

ONSEMI FDT86256

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans MOSFET N-CH Si 150V 1.2A 4-Pin(3+Tab) SOT-223 T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1.2 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
150 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
10 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
1 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.845 ohm
Pulsed Drain Current-Max (IDM)
2 A
Time@Peak Reflow Temperature-Max (s)
30