FAIRCHILD SEMICONDUCTOR CORP FDT86106LZ | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP FDT86106LZ

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET 100V N-Channel PowerTrench MOSFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
2.2
Drain Current-Max (ID) (A)
3.2
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
20
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
5
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
30
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
12
Pulsed Drain Current-Max (IDM) (A)
12
Drain-source On Resistance-Max (ohm)
0.108
Time@Peak Reflow Temperature-Max (s)
30