FDS8896
ONSEMI
- 生命周期状态NRFND
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Trans MOSFET N-CH 30V 15A 8-Pin SOIC T/R
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishMatte Tin (Sn) - annealed
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)2.5
- Drain Current-Max (ID) (A)15
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)68
- DS Breakdown Voltage-Min (V)30
- Feedback Cap-Max (Crss) (pF)300
- Peak Reflow Temperature (Cel)260
- Turn-off Time-Max (toff) (ns)126
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)2.5
- Avalanche Energy Rating (Eas) (mJ)196
- Pulsed Drain Current-Max (IDM) (A)110
- Drain-source On Resistance-Max (ohm)0.006
- Time@Peak Reflow Temperature-Max (s)30
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FDS8896