ONSEMI FDS86106 | 搜芯易Sourcengine

ONSEMI FDS86106

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
PT5 NCH 100/20V POWERTRENCH MOSFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SOIC-8
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
5
Drain Current-Max (ID) (A)
3.4
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
20
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
3
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
25
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
13
Pulsed Drain Current-Max (IDM) (A)
15
Drain-source On Resistance-Max (ohm)
0.105
Time@Peak Reflow Temperature-Max (s)
30