ONSEMI FDS6812A | 搜芯易Sourcengine

ONSEMI FDS6812A

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Field-Effect Transistor, 6.7A I(D), 20V, 0.022ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
2
Drain Current-Max (ID) (A)
6.7
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
32
DS Breakdown Voltage-Min (V)
20
Feedback Cap-Max (Crss) (pF)
130
Turn-off Time-Max (toff) (ns)
48
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
2
Pulsed Drain Current-Max (IDM) (A)
35
Drain-source On Resistance-Max (ohm)
0.022