FDMS7672AS
ONSEMI
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明MOSFET N-CH 30V 19A/42A 8PQFN
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XDSO-N5
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMatte Tin (Sn) - annealed
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals5
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)46
- Drain Current-Max (ID) (A)19
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)60
- Pulsed Drain Current-Max (IDM) (A)90
- Drain-source On Resistance-Max (ohm)0.004
- Time@Peak Reflow Temperature-Max (s)30
FDMS7672AS有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
FDMS7672AS