ONSEMI FDMS1D5N03 | 搜芯易Sourcengine

ONSEMI FDMS1D5N03

生命周期状态
EOL
说明
PowerTrench MOSFET N-Channel 30 V 218 A 1.15m Ohm 8-Pin Power 56 T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F5
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MO-240AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
83
Drain Current-Max (ID) (A)
218
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
39
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
150
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
94
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
600
Pulsed Drain Current-Max (IDM) (A)
1084
Drain-source On Resistance-Max (ohm)
0.00115
Time@Peak Reflow Temperature-Max (s)
30