FDMS001N025DSD
ONSEMI
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明MOSFET 2N-CH 25V 19A 8PQFN
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-N8
- Configuration2 N-Channel (Dual) Asymmetrical
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)19 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min25 V
- Operating Temperature-Min-55 Cel
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)121 mJ
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.00325 ohm
- Pulsed Drain Current-Max (IDM)381 A
- Time@Peak Reflow Temperature-Max (s)30
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FDMS001N025DSD