FAIRCHILD SEMICONDUCTOR CORP FDMD84100 | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP FDMD84100

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET Dual N-Channel PowerTrench MOSFET 100V, 21A, 20mohm
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-N8
Configuration
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
JEDEC-95 Code
MO-229
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
7
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Peak Reflow Temperature (Cel)
260
Avalanche Energy Rating (Eas) (mJ)
121
Pulsed Drain Current-Max (IDM) (A)
80
Drain-source On Resistance-Max (ohm)
0.02