ONSEMI FDMD82100L | 搜芯易Sourcengine

ONSEMI FDMD82100L

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Transistor MOSFET Array Dual N-CH 100V 24A 12-Pin PQFN T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-N12
Configuration
2 N-Channel (Dual)
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN SOURCE
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
12
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
7 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
15 pF
DS Breakdown Voltage-Min
100 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
38 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.0195 ohm
Time@Peak Reflow Temperature-Max (s)
30