FDMC86520L
FAIRCHILD SEMICONDUCTOR CORP
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明MOSFET 60V N-Chnl Pwr Trench MOSFET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeS-PDSO-N5
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeMO-229
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee4
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishNICKEL PALLADIUM GOLD
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals5
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)40
- Drain Current-Max (ID) (A)13.5
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)79
- Pulsed Drain Current-Max (IDM) (A)60
- Drain-source On Resistance-Max (ohm)0.0079
- Time@Peak Reflow Temperature-Max (s)30
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FDMC86520L