FAIRCHILD SEMICONDUCTOR CORP FDMC86261P | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP FDMC86261P

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET -150 P-Channel Shielded Gate PowerTrench MOSFET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
S-PDSO-N5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
NICKEL PALLADIUM GOLD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
40
Drain Current-Max (ID) (A)
2.7
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
150
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
121
Pulsed Drain Current-Max (IDM) (A)
20
Drain-source On Resistance-Max (ohm)
0.16
Time@Peak Reflow Temperature-Max (s)
30