ONSEMI FDD8424H_F085A | 搜芯易Sourcengine

ONSEMI FDD8424H_F085A

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Trans MOSFET N/P-CH Si 40V 9A/6.5A 5-Pin(4+Tab) DPAK T/R Automotive AEC-Q101
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G4
Configuration
N and P-Channel
JEDEC-95 Code
TO-252AD
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
2
Reference Standard
AEC-Q101
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain Current-Max (ID)
9 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
40 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
35 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
29 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.024 ohm
Pulsed Drain Current-Max (IDM)
55 A
Time@Peak Reflow Temperature-Max (s)
30