ONSEMI FDD5N50NZFTM | 搜芯易Sourcengine

ONSEMI FDD5N50NZFTM

生命周期状态
EOL
RoHS
符合RoHS标准
说明
ONSEMI - FDD5N50NZFTM - MOSFET, N-CH, 500V, 3.7A, 150DEG C/62.5W ROHS COMPLIANT: YES
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - annealed
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
62.5
Drain Current-Max (ID) (A)
3.7
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
165
Pulsed Drain Current-Max (IDM) (A)
14
Drain-source On Resistance-Max (ohm)
1.75
Time@Peak Reflow Temperature-Max (s)
30