ONSEMI FDD3510H | 搜芯易Sourcengine

ONSEMI FDD3510H

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Trans MOSFET N/P-CH 80V 4.3A/2.8A 5-Pin(4+Tab) DPAK T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G4
Configuration
N and P-Channel, Common Drain
JEDEC-95 Code
TO-252
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Number of Elements
2
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain Current-Max (ID)
4.3 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
80 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
35 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
37 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.08 ohm
Pulsed Drain Current-Max (IDM)
20 A
Time@Peak Reflow Temperature-Max (s)
30