ONSEMI FDD16AN08A0-F085 | 搜芯易Sourcengine

ONSEMI FDD16AN08A0-F085

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 75V 9A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Number of Elements
1
Reference Standard
AEC-Q101
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
9 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
75 V
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-55 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
135 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
95 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.016 ohm
Time@Peak Reflow Temperature-Max (s)
30