INFINEON TECHNOLOGIES AG FD800R33KF2C-K | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FD800R33KF2C-K

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 1300A I(C), 3300V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
3A228.C
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X7
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
4.25
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
9600
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
480
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
1900
Collector Current-Max (IC) (A)
1300
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
3300
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED