INFINEON TECHNOLOGIES AG FD600R17KF6CB2NOSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FD600R17KF6CB2NOSA1

生命周期状态
Active
说明
Transistor IGBT Module N-CH 1700V 975A ±20V Screw
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
3.1
Case Connection
ISOLATED
Polarity/Channel Type
N-Channel
Power Dissipation-Max (W)
4800
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
470
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
1220
Collector Current-Max (IC) (A)
975
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1700