FD600R17KF6B2
EUPEC GMBH & CO KG
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max3.1 V
- JESD-30 CodeR-XUFM-X10
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals10
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Turn-on Time-Nom (ton)300 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)1100 ns
- Operating Temperature-Max125 Cel
- Collector Current-Max (IC)1200 A
- Power Dissipation-Max (Abs)4800 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1700 V
FD600R17KF6B2有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
FD600R17KF6B2