INFINEON TECHNOLOGIES AG FD600R06ME3_S2 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FD600R06ME3_S2

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT Modules IGBT Module 600A 600V
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUFM-X9
Configuration
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
1.6
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
9
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
2250
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
275
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
960
Collector Current-Max (IC) (A)
600
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
600
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED