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FD-DF80R12W1H3_B52

INFINEON TECHNOLOGIES AG

INFINEON TECHNOLOGIES AG FD-DF80R12W1H3_B52
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • VCEsat-Max
    2.4 V
  • Case Connection
    ISOLATED
  • Polarity/Channel Type
    N-Channel
  • Turn-on Time-Nom (ton)
    43 ns
  • Gate-emitter Voltage-Max
    20 V
  • Turn-off Time-Nom (toff)
    320 ns
  • Operating Temperature-Max
    150 Cel
  • Operating Temperature-Min
    -40 Cel
  • Power Dissipation-Max (Abs)
    215 W
  • Transistor Element Material
    SILICON
  • Gate-emitter Thr Voltage-Max
    6.5 V
  • Collector-emitter Voltage-Max
    1200 V
  • Configuration
    Single

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FD-DF80R12W1H3_B52
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FD-DF80R12W1H3_B52