ONSEMI FCU4300N80Z | 搜芯易Sourcengine

ONSEMI FCU4300N80Z

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 800V 1.6A 3-Pin(3+Tab) IPAK Tube
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251AA
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1.6 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
53 ns
DS Breakdown Voltage-Min
800 V
Turn-off Time-Max (toff)
94 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
27.8 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
8.2 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
4.3 ohm
Pulsed Drain Current-Max (IDM)
3.2 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED