ONSEMI FCP11N60N | 搜芯易Sourcengine

ONSEMI FCP11N60N

生命周期状态
Discontinued
说明
Trans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220 Tube
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
10.8 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
65.4 ns
Feedback Cap-Max (Crss)
5 pF
DS Breakdown Voltage-Min
600 V
Turn-off Time-Max (toff)
124 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
94 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
201.7 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.299 ohm
Pulsed Drain Current-Max (IDM)
32.4 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED