FCH47N60NF
FAIRCHILD SEMICONDUCTOR CORP
- 生命周期状态Transferred
- RoHS符合RoHS标准
- 说明Power Field-Effect Transistor, 45.8A I(D), 600V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)368
- Drain Current-Max (ID) (A)45.8
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)600
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)2926
- Pulsed Drain Current-Max (IDM) (A)137.4
- Drain-source On Resistance-Max (ohm)0.065
FCH47N60NF有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
FCH47N60NF