F9211
Fuji Electric Co., Ltd.
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 800V, 1.1ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Qualification StatusNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min800 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max1.1 ohm
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