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F59L8G81KSA-25BG2R

ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC

ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC F59L8G81KSA-25BG2R
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    SLC NAND TYPE
  • Technology
    CMOS
  • Width (mm)
    9
  • Length (mm)
    11
  • JESD-30 Code
    R-PBGA-B63
  • Memory Width
    8
  • Package Code
    VFBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    FLASH
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    SERIAL
  • Terminal Position
    BOTTOM
  • Memory Organization
    1GX8
  • Number of Functions
    1
  • Number of Terminals
    63
  • Terminal Pitch (mm)
    0.8
  • Number of Words Code
    1G
  • Memory Density (bits)
    8589934592
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    1
  • Supply Voltage-Max (V)
    3.6
  • Supply Voltage-Min (V)
    2.7
  • Supply Voltage-Nom (V)
    3.3
  • Data Retention Time-Min
    10
  • Number of Words (words)
    1073741824
  • Programming Voltage (V)
    3.3
  • Standby Current-Max (A)
    1.0E-6
  • Supply Current-Max (mA)
    30
  • Package Equivalence Code
    BGA63,10X12,32
  • Endurance (Write/Erase Cycles)
    60000
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    0

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