F50L2G41XA-104BBG2B
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明Flash, 256MX8, PBGA24
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- TechnologyCMOS
- Width (mm)6
- Length (mm)8
- JESD-30 CodeR-PBGA-B24
- Memory Width8
- Package CodeTBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeFLASH
- Operating ModeSYNCHRONOUS
- Parallel/SerialSERIAL
- Serial Bus TypeQSPI
- Write ProtectionHARDWARE/SOFTWARE
- Terminal PositionBOTTOM
- Memory Organization256MX8
- Number of Functions1
- Number of Terminals24
- Terminal Pitch (mm)1
- Number of Words Code256M
- Memory Density (bits)2147483648
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)2.7
- Supply Voltage-Nom (V)3.3
- Data Retention Time-Min10
- Number of Words (words)268435456
- Programming Voltage (V)3.3
- Standby Current-Max (A)2.0E-5
- Supply Current-Max (mA)35
- Package Equivalence CodeBGA24,4X6,20
- Clock Frequency-Max (MHz)104
- Endurance (Write/Erase Cycles)100000
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)0
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