F50D4G41XB-83RAG2XE
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明Flash, 4GX1
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- TechnologyCMOS
- Width (mm)6
- Length (mm)8
- JESD-30 CodeR-XDSO-N8
- Memory Width1
- Package CodeHVSON
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE Meter
- Surface MountYES
- Terminal FormNO LEAD
- Memory IC TypeFLASH
- Operating ModeSYNCHRONOUS
- Parallel/SerialSERIAL
- Serial Bus TypeSPI
- Write ProtectionHARDWARE
- Terminal PositionDUAL
- Memory Organization4GX1
- Number of Functions1
- Number of Terminals8
- Terminal Pitch (mm)1.27
- Number of Words Code4G
- Memory Density (bits)4294967296
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Seated Height-Max (mm)0.8
- Supply Voltage-Max (V)1.95
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Data Retention Time-Min10
- Number of Words (words)4294967296
- Programming Voltage (V)1.8
- Standby Current-Max (A)5.0E-5
- Supply Current-Max (mA)25
- Package Equivalence CodeSOLCC8,.3
- Clock Frequency-Max (MHz)83
- Endurance (Write/Erase Cycles)100000
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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