Fuji Electric Co., Ltd. F5012H | 搜芯易Sourcengine

Fuji Electric Co., Ltd. F5012H

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 3A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T5
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
5
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
3 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
80 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.16 ohm