INFINEON TECHNOLOGIES AG F475R12MS4BOMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG F475R12MS4BOMA1

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X14
Configuration
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
3.75
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
4
Number of Terminals
14
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
500
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
190
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
390
Collector Current-Max (IC) (A)
100
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
UL APPROVED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED