INFINEON TECHNOLOGIES AG F3L80R12W1H3B11BOMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG F3L80R12W1H3B11BOMA1

生命周期状态
Discontinued
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
1.95 V
Case Connection
ISOLATED
Polarity/Channel Type
N-Channel
Turn-on Time-Nom (ton)
210 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
425 ns
Operating Temperature-Min
-40 Cel
Collector Current-Max (IC)
90 A
Power Dissipation-Max (Abs)
275 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.5 V
Collector-emitter Voltage-Max
1200 V