INFINEON TECHNOLOGIES AG F3L400R10W3S7F_B11 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG F3L400R10W3S7F_B11

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 220A I(C), 950V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUFM-X20
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
1.6
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
6
Number of Terminals
20
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
127
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
773
Collector Current-Max (IC) (A)
220
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
5.85
Collector-emitter Voltage-Max (V)
950
Screening Level / Reference Standard
IEC-61140