F12S50VX2-4072
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 12A I(D), 500V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)12 A
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)130 ns
- DS Breakdown Voltage-Min500 V
- Turn-off Time-Max (toff)280 ns
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max60 W
- Drain-source On Resistance-Max0.7 ohm
- Pulsed Drain Current-Max (IDM)36 A
F12S50VX2-4072有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
F12S50VX2-4072