F1209
POLYFET R F DEVICES
- 生命周期状态NRFND
- RoHS符合RoHS标准
- 说明Power Field-Effect Transistor, 4A I(D), N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)4 A
- Operating Temperature-Max200 Cel
- Power Dissipation-Max (Abs)80 W
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F1209
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