ESM112R-M82
GENTRON CORP
- 生命周期状态Transferred
- 说明Power Field-Effect Transistor, 15A I(D), 1-Element, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Elements1
- Drain Current-Max (ID)15 A
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)300 W
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ESM112R-M82
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ESM112R-M82