MICROSS COMPONENTS EPC7019GC | 搜芯易Sourcengine

MICROSS COMPONENTS EPC7019GC

生命周期状态
Active
说明
Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XBCC-N5
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
DRAIN SOURCE
Terminal Position
BOTTOM
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
5
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
80
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
40
Feedback Cap-Max (Crss) (pF)
35
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
530
Drain-source On Resistance-Max (ohm)
0.004
Screening Level / Reference Standard
MIL-STD-750