EFFICIENT POWER CONVERSION CORP EPC2110ENGR | 搜芯易Sourcengine

EFFICIENT POWER CONVERSION CORP EPC2110ENGR

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 3.4A I(D), 120V, 0.06ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-XXUC-B9
Configuration
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
BALL
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
UNSPECIFIED
Number of Elements
2
Number of Terminals
9
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
3.4 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
0.75 pF
DS Breakdown Voltage-Min
120 V
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-40 Cel
Transistor Element Material
GALLIUM NITRIDE
Drain-source On Resistance-Max
0.06 ohm
Pulsed Drain Current-Max (IDM)
20 A