EFFICIENT POWER CONVERSION CORP EPC2012C | 搜芯易Sourcengine

EFFICIENT POWER CONVERSION CORP EPC2012C

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 5A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XXUC-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
UNSPECIFIED
Additional Feature
ULTRA LOW RESISTANCE
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
5
Moisture Sensitivity Level
1
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
200
Pulsed Drain Current-Max (IDM) (A)
22
Drain-source On Resistance-Max (ohm)
0.1