ONSEMI EMG5DXV5T1G | 搜芯易Sourcengine

ONSEMI EMG5DXV5T1G

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
SS SOT553 BR XSTR NPN
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F5
Configuration
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e3
Terminal Finish
TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 4.7
Number of Elements
2
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
80
Power Dissipation-Max (W)
0.338
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.1
Collector-emitter Voltage-Max (V)
50