EXCELLIANCE MOS CORP EMB04N03H | 搜芯易Sourcengine

EXCELLIANCE MOS CORP EMB04N03H

生命周期状态
Contact Mfr
说明
Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
75 A
DS Breakdown Voltage-Min
30 V
Operating Temperature-Min
-55 Cel
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
140 mJ
Drain-source On Resistance-Max
0.004 ohm
Pulsed Drain Current-Max (IDM)
160 A