Etron Technology Inc. EM636165VE-7IG | 搜芯易Sourcengine

Etron Technology Inc. EM636165VE-7IG

生命周期状态
Contact Mfr
REACH
REACH compliant
说明
Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM

ECCN
EAR99
ECCN Governance
EAR

I/O Type
COMMON
Technology
CMOS
Width (mm)
6.4
Access Mode
DUAL BANK PAGE BURST
Length (mm)
10.1
JESD-30 Code
R-PBGA-B60
Memory Width
16
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
SYNCHRONOUS DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
4096
Number of Ports
1
Terminal Position
BOTTOM
Memory Organization
1MX16
Number of Functions
1
Number of Terminals
60
Terminal Pitch (mm)
0.65
Access Time-Max (ns)
5.5
Number of Words Code
1M
Memory Density (bits)
16777216
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
1048576
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max (A)
0.002
Supply Current-Max (mA)
140
Interleaved Burst Length
1,2,4,8
Package Equivalence Code
BGA60,7X15,25
Clock Frequency-Max (MHz)
143
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40