EM636165BE-8G
Etron Technology Inc.
- 生命周期状态Contact Mfr
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Synchronous DRAM, 1MX16, 6.5ns, CMOS, PBGA60
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B60
- Memory Width16
- Organization1MX16
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density16777216 bit
- Memory IC TypeSYNCHRONOUS DRAM
- Refresh Cycles4096
- Terminal Pitch0.635 mm
- Access Time-Max6.5 ns
- Number of Words1048576 words
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Supply Current-Max130 mA
- Number of Terminals60
- Standby Current-Max0.002 Amp
- Number of Words Code1M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length1,2,4,8,FP
- Interleaved Burst Length1,2,4,8
- Package Equivalence CodeBGA60,7X15,25
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)3.3 V
- Clock Frequency-Max (fCLK)125 MHz
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EM636165BE-8G