ELM TECHNOLOGY CORP ELM32404LA-S | 搜芯易Sourcengine

ELM TECHNOLOGY CORP ELM32404LA-S

生命周期状态
Contact Mfr
说明
Power Field-Effect Transistor, 12A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
12 A
DS Breakdown Voltage-Min
30 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.025 ohm
Pulsed Drain Current-Max (IDM)
30 A