Microsemi Corporation EH10006ZIS | 搜芯易Sourcengine

Microsemi Corporation EH10006ZIS

生命周期状态
Transferred
说明
Bridge Rectifier Diode, 3 Phase, 100A, 600V V(RRM), Silicon
类别
Semiconductors Diodes Bridge Rectifier Diodes BRIDGE RECTIFIER DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
BRIDGE RECTIFIER DIODE
JESD-30 Code
R-XUFM-X4
Configuration
BRIDGE, 6 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
J-STD-609 Code
e0
Case Connection
ISOLATED
Terminal Finish
Tin/Lead (Sn/Pb)
Number of Phases
3
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
TRANSIENT SUPPRESSOR ACROSS OUTPUT
Number of Elements
6
Number of Terminals
4
Package Body Material
UNSPECIFIED
Diode Element Material
SILICON
Output Current-Max (A)
100
Forward Voltage-Max (V)
1.1
Reverse Current-Max (uA)
0.004
Rep Pk Reverse Voltage-Max (V)
600
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Non-rep Pk Forward Current-Max (A)
1500