EGN21B180IV
SUMITOMO ELECTRIC DEVICE INNOVATIONS USA INC
- 生命周期状态Contact Mfr
- 说明RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-CDFM-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Power Gain-Min (Gp)14.5 dB
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min55 V
- Operating Temperature-Max180 Cel
- Transistor Element MaterialGALLIUM NITRIDE
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EGN21B180IV
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EGN21B180IV