- 生命周期状态Contact Mfr
- 说明RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XDFM-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionDUAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals2
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min120 V
- Transistor Element MaterialSILICON
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EGN010MK
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EGN010MK