EFC2J017NUZTDG
ONSEMI
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PBCC-N10
- ConfigurationCOMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionBOTTOM
- Number of Elements2
- Number of Terminals10
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)3.1
- Drain Current-Max (ID) (A)33
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)12
- Operating Temperature-Max (Cel)150
- Pulsed Drain Current-Max (IDM) (A)135
- Drain-source On Resistance-Max (ohm)0.00285
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EFC2J017NUZTDG