ELPIDA MEMORY INC EDX5116ABSE-4C-E | 搜芯易Sourcengine

ELPIDA MEMORY INC EDX5116ABSE-4C-E

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Rambus DRAM, 32MX16, CMOS, PBGA104
类别
Semiconductors Memory ICs DRAMs RAMBUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

Width
14.56 mm
Length
15.18 mm
Technology
CMOS
Access Mode
BLOCK ORIENTED PROTOCOL
JESD-30 Code
R-PBGA-B104
Memory Width
16
Organization
32MX16
Package Code
TBGA
Self Refresh
YES
JESD-609 Code
e1
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
536870912 bit
Memory IC Type
RAMBUS DRAM
Operating Mode
SYNCHRONOUS
Terminal Pitch
1.27 mm
Number of Ports
1
Number of Words
33554432 words
Terminal Finish
TIN SILVER COPPER
Seated Height-Max
1.15 mm
Terminal Position
BOTTOM
Additional Feature
SELF CONTAINED REFRESH
Number of Functions
1
Number of Terminals
104
Number of Words Code
32M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (Vsup)
1.89 V
Supply Voltage-Min (Vsup)
1.71 V
Supply Voltage-Nom (Vsup)
1.8 V
Peak Reflow Temperature (Cel)
260