Micron Technology EDW1032BABG-40-F | 搜芯易Sourcengine

Micron Technology EDW1032BABG-40-F

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
DDR5 DRAM, 32MX32, CMOS, PBGA170
类别
Semiconductors Memory ICs DRAMs DDR5 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B170
Memory Width
32
Organization
32MX32
Package Code
FBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
1073741824 bit
Memory IC Type
DDR5 DRAM
Refresh Cycles
8192
Terminal Pitch
0.8 mm
Number of Words
33554432 words
Temperature Grade
OTHER
Terminal Position
BOTTOM
Number of Terminals
170
Number of Words Code
32M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Alternate Memory Width
16
Output Characteristics
3-STATE
Sequential Burst Length
8
Interleaved Burst Length
8
Package Equivalence Code
BGA170,14X17,32
Operating Temperature-Max
95 Cel
Operating Temperature-Min
0 Cel