EDJ5316BASE-DJ-E
ELPIDA MEMORY INC
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明DDR3 DRAM, 32MX16, 0.225ns, CMOS, PBGA96
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- Width9.8 mm
- Length14 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B96
- Memory Width16
- Organization32MX16
- Package CodeTFBGA
- Self RefreshYES
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density536870912 bit
- Memory IC TypeDDR3 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles4096
- Terminal Pitch0.8 mm
- Access Time-Max0.225 ns
- Number of Ports1
- Number of Words33554432 words
- Seated Height-Max1.2 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max420 mA
- Number of Functions1
- Number of Terminals96
- Standby Current-Max0.012 Amp
- Number of Words Code32M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length4,8
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA96,9X16,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.575 V
- Supply Voltage-Min (Vsup)1.425 V
- Supply Voltage-Nom (Vsup)1.5 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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EDJ5316BASE-DJ-E